Search Constraints
Search Results
Select an image to start the slideshow
MOCVD Growth and Electrical Characterization of AlInGaN Heterojunctions
1 of 9
Design of III-Nitride Hot Electron Transistors
2 of 9
Growth Optimization of III-N Electronic Devices by Plasma-Assisted Molecular Beam Epitaxy
3 of 9
Design and epitaxial growth of ultra-scaled N-polar GaN/(In, Al, Ga) N HEMTs by metal organic chemical deposition and device characterization
4 of 9
Gallium nitride vertical electron transistors for high power applications
5 of 9
Highly Scaled N-polar Gallium Nitride MIS-HEMTs
6 of 9
Design of Integrated III-Nitride/Non-III-Nitride Multijunction Photovoltaic Devices
7 of 9
Contributions to the Understanding of (Aluminum,Gallium)Nitride - Silicon Nitride Interfaces
8 of 9
Design, Fabrication and Characterization of III-Nitride Based Solar Cells
9 of 9