Nonpolar and semipolar planes on wurtzite nitride have attracted much attention due to their eliminated and reduced polarization-related electric field in the quantum wells (QWs). Violet and blue nonpolar m-plane laser diodes (LDs) have been demonstrated under continuous wave operation. However, the operation in green spectral region has been limited due to low In incorporation and the formation of basal plane stacking faults on m-plane. With decent In incorporation on semipolar planes, high performance green light-emitting diodes (LEDs) and LDs have been demonstrated on (202¯1) plane. On the other hand, low efficiency droop and high optical polarization ratio were also observed on semipolar (202¯1¯) LEDs.

Index-guided ridge lasers with cleaved facets were fabricated. Polishing and dry-etching were applied on the backside surface after lapping to improve the contact characteristics. To suppress the morphologies, InGaN/GaN superlattices were used as guiding layers instead of conventional bulk InGaN layers. Semipolar (202¯1¯) laser diodes with lasing wavelength up to 505 nm were demonstrated with 4 nm blueshift between the spontaneous emission and lasing.