Current Aperture III-Nitride Edge-emitting Blue Laser Diode

Author:

Megalini, Ludovico

Degree Grantor:

University of California, Santa Barbara. Electrical and Computer Engineering

Degree Supervisor:

Steven P. DenBaars

Place of Publication:

[Santa Barbara, Calif.]

Publisher:

University of California, Santa Barbara

Creation Date:

2014

Issued Date:

2014

Topics:

Engineering, Materials Science and Engineering, Electronics and Electrical

Keywords:

GaN,
Etching, and
Laser

Genres:

Online resources and Dissertations, Academic

Dissertation:

M.S.--University of California, Santa Barbara, 2014

Description:

This work presents the first Nitride non polar Current Aperture Edge Emitting Blue Laser Diode (CA-LD) fabricated using the Photo-Electro-Chemical Etching (PECE) technique.

The main features of this design are represented by the deep etching of the laser diode ridge through the active region, the controlled etching of the active region by PECE and the increase of the p-contact area with respect to the active region area. Preliminary experiments manifest that CA-LD has similar threshold current density, slope efficiency and peak output power of the more commonly used shallow etch ridge design and it has also shown a reduction in the series resistance down to &sim;40% with respect to the shallow-etch LDs indicating the potential of the CA-LD design in high-efficient, high-power, high-frequency LD applications.

Physical Description: