Semiconductor light emitting diodes (LEDs) are, as of the writing of this thesis, beginning to replace incandescent and fluorescent forms of space lighting. The technology that is driving this change in lighting has resulted from the development of gallium nitride (GaN) and its various related alloys. Critical to the development of this technology and its proceeding commercialization has been the discovery and improvement of methods for improving light extraction from the semiconductor materials. We demonstrate, characterize, and evaluate the utility of several methods of enhancing photon extraction from LEDs grown homoepitaxially by metal-organic chemical vapor deposition (MOCVD) on bulk GaN substrates of various crystal orientations. Furthermore, we assess the impact of phosphor deployment methods for achieving optimal light extraction in white lighting applications.