Group III-V Nanowire Growth and Characterization
- Degree Grantor:
- University of California, Santa Barbara. Electrical & Computer Engineering
- Degree Supervisor:
- John E. Bowers
- Place of Publication:
- [Santa Barbara, Calif.]
- Publisher:
- University of California, Santa Barbara
- Creation Date:
- 2016
- Issued Date:
- 2016
- Topics:
- Materials science and Electrical engineering
- Keywords:
- Nanowire,
Group III-V Semiconductor Materials - Genres:
- Online resources and Dissertations, Academic
- Dissertation:
- M.S.--University of California, Santa Barbara, 2016
- Description:
Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations of larger aspect ratio and smaller volume. In situ growth of semiconductor devices is extremely attractive, as it doesn't require expensive lithography treatment. Over the past ten years, a great deal of work has been done to explore NW, incorporation of group III-V materials and band engineering for the electronic and optoelectronic devices. Because pseudo one-dimensional heterostructures may be grown without involving lattice mismatch defects, NWs may give rise to superior electronic, photonic, and magnetic performances as compared to conventional bulk or planar structures.
- Physical Description:
- 1 online resource (298 pages)
- Format:
- Text
- Collection(s):
- UCSB electronic theses and dissertations
- Other Versions:
- http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:10103623
- ARK:
- ark:/48907/f3348k5d
- ISBN:
- 9781339671895
- Catalog System Number:
- 990046534740203776
- Copyright:
- Mingjin Wang, 2016
- Rights:
- In Copyright
- Copyright Holder:
- Mingjin Wang
File | Description |
---|---|
Access: Public access | |
Wang_ucsb_0035N_12949.pdf | pdf (Portable Document Format) |