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Carter, Andrew Daniel
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Mark Rodwell
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University of California, Santa Barbara. Electrical & Computer Engineering
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2013
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Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics
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Text
Collection:
UCSB electronic theses and dissertations
Author:
Carter, Andrew Daniel
Creation Date:
2013
Issued Date:
2013
