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III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications
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Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics
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Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy
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