Alexandria Digital Research Library

Group III-V Nanowire Growth and Characterization

Author:
Wang, Mingjin
Degree Grantor:
University of California, Santa Barbara. Electrical & Computer Engineering
Degree Supervisor:
John E. Bowers
Place of Publication:
[Santa Barbara, Calif.]
Publisher:
University of California, Santa Barbara
Creation Date:
2016
Issued Date:
2016
Topics:
Materials science and Electrical engineering
Keywords:
Nanowire
Group III-V Semiconductor Materials
Genres:
Online resources and Dissertations, Academic
Dissertation:
M.S.--University of California, Santa Barbara, 2016
Description:

Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations of larger aspect ratio and smaller volume. In situ growth of semiconductor devices is extremely attractive, as it doesn't require expensive lithography treatment. Over the past ten years, a great deal of work has been done to explore NW, incorporation of group III-V materials and band engineering for the electronic and optoelectronic devices. Because pseudo one-dimensional heterostructures may be grown without involving lattice mismatch defects, NWs may give rise to superior electronic, photonic, and magnetic performances as compared to conventional bulk or planar structures.

Physical Description:
1 online resource (298 pages)
Format:
Text
Collection(s):
UCSB electronic theses and dissertations
ARK:
ark:/48907/f3348k5d
ISBN:
9781339671895
Catalog System Number:
990046534740203776
Rights:
Inc.icon only.dark In Copyright
Copyright Holder:
Mingjin Wang
File Description
Access: Public access
Wang_ucsb_0035N_12949.pdf pdf (Portable Document Format)