Search Constraints
« Previous |
1 - 10 of 11
|
Next »
Search Results
Select an image to start the slideshow
MOCVD Growth and Electrical Characterization of AlInGaN Heterojunctions
1 of 10
Design of III-Nitride Hot Electron Transistors
2 of 10
III-As/N-Polar III-N Wafer-Bonded Heterojunctions and Their Implementation in Current Aperture Vertical Electron Transistors
3 of 10
Growth Optimization of III-N Electronic Devices by Plasma-Assisted Molecular Beam Epitaxy
4 of 10
Design and epitaxial growth of ultra-scaled N-polar GaN/(In, Al, Ga) N HEMTs by metal organic chemical deposition and device characterization
5 of 10
An Exploration of GaN-based Heterojunction Bipolar Transistors
6 of 10
Gallium nitride vertical electron transistors for high power applications
7 of 10
Highly Scaled N-polar Gallium Nitride MIS-HEMTs
8 of 10
Design of Integrated III-Nitride/Non-III-Nitride Multijunction Photovoltaic Devices
9 of 10
Contributions to the Understanding of (Aluminum,Gallium)Nitride - Silicon Nitride Interfaces
10 of 10